Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy, M. Beaudoin, I.C.W. Chan, D. Beaton, M. Elouneg Jamroz, T. Tiedje, M. Whitwick, E.C. Young, J.F. Young, N. Zangenberg, J. Cryst. Growth, 311, 1662-1665 (2009)

The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values.