Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1-xBi_x/GaAs heterostructures, Yu. I. Mazur, V G Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S-Q. Yu, T. Tiedje, J. Appl. Phys. D, 46, 065306 (2013)

The structural and optical properties of a set of high-quality GaAs_1-xBi_x/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.