Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs, N.A. Riordan, C. Gogineni, S.R. Johnson, X.F. Lu, T. Tiedje, D. Ding, Y.H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, J. Mat. Sci. - Mat. In Electronics, 23, 1977 (2012)

Bulk and quantum well GaAs_1-xBi_x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm²), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.