Temperature dependence of hole mobility in GaAs_1-xBi_x alloys, D. A. Beaton, R. B. Lewis, M. Masnadi-Shirazi, T. Tiedje, J. Appl. Phys. 108, 083708 (2010)

The Hall mobility of holes has been measured in GaAsgrown at low temperatures and in GaAs_1-xBi_x alloys for Bi concentrations ranging from 0.94% to 5.5%. The hole mobility is found to decrease with increasing Bi content. The temperature dependence of the mobility in the 25 to 300 K range is fit with a combination of phonon scattering, ionized impurity scattering, and Bi related scattering. The hole scattering cross-section for an isolated Bi impurity is estimated to be 0.2 nm² by 0.2 nm². The temperature independent mobility at the highest Bi concentration (x=5.5%), is interpreted as being limited by scattering from Bi clusters.