GaAs_1-xBi_x light emitting diodes, R.B. Lewis , D.A. Beaton, X. Lu , T. Tiedje, J. Cryst. Growth, 311, 1872-1875 (2009)

GaAs_1-xBi_x light emitting diodes have been grown and characterized. The p-i-n structure uses a 100 nm intrinsic layer with a central 50 nm GaAs_1-xBi_x light emitting layer with 1:8% bismuth. The diodes showed peaks in the electroluminescence (EL) emission at 987 nm from the GaAs_1-xBi_x and 870 nm from the GaAs. The wavelength of the peak in the EL from the GaAs_1-xBi_x was independent of temperature in the range 100-300 K while the GaAs peak shifted with temperature as expected. Photoluminescence measurements on the same p-i-n structure show temperature dependence of the peak wavelength similar to the temperature dependence of GaAs.