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Journal papers

. Bandedge optical properties of MBE-grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy, M. Beaudoin, R.B. Lewis, J.J. Andrews, V. Bahrami-Yekta, M. Masnadi-Shirazi, S.K. O Leary, T. Tiedje, J. Cryst. Growth, 425, 245-249 (2015)
[ abstract | DOI ]

. MBE growth optimization for GaAs_1-xBi_x and dependence of photoluminescence on growth temperature, V. Bahrami-Yekta, T. Tiedje, M. Masnadi-Shirazi, Semicond. Sci. Technol. 30, 094007 (2015)
[ abstract | DOI ]

. Erratum: Deep level defects in n-type GaAsBi and GaAs grown at low temperatures, (vol 113, 133708, 2013), P.M. Mooney, K.P. Watkins, Z. Jiang, R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D.A. Beaton, T. Tiedje, J. Appl. Phys. 117, 019901 (2015)
[ abstract | DOI ]

. Bandgap and optical absorption edge of GaAs_1-xBi_x alloys with 0 < x < 17.8%, M. Masnadi-Shirazi, R. B. Lewis, V. Bahrami-Yekta, T. Tiedje, M. Chicoine, P. Servati, J. Appl. Phys. 116, 223506 (2014)
[ abstract | DOI |pdf ]

. Nanoplasmonics enhanced terahertz sources, A. Jooshesh, L. Smith, M. Masnadi-Shirazi, V. Bahrami-Yekta, T. Tiedje, T. E. Darcie, R. Gordon, Optic Exp. 22, 27992-28001 (2014)
[ abstract | DOI |pdf ]

. Closed-cycle cooling of cryopanels in molecular beam epitaxy, R.B. Lewis, V. Bahrami-Yekta, M.J. Patel, T. Tiedje, M. Masnadi-Shirazi, J. Vac. Sci. Technol. B 32, 02C102 (2014)
[ abstract | DOI ]

. Enhanced Terahertz Bandwidth and Power from GaAsBi-based Sources, B. Heshmat, M. Masnadi‐Shirazi, R.B. Lewis, J. Zhang, T. Tiedje, R. Gordon, T. Darcie, Adv.Optical Mater. 1, 714-719 (2013)
[ abstract | DOI ]

. Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy, R.B. Lewis, J.A. Mackenzie, T. Tiedje, D.A. Beaton, M. Masnadi-Shirazi, V. Bahrami-Yekta, K.P. Watkins, P.M. Mooney, J. Vac. Sci. Technol. B 31, 03C116 (2013)
[ abstract | DOI ]

. Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility and Bi-induced acceptor states, G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. Christianen, J.C. Maan, A. Patane, T. Tiedje, Phys. Status Solidi B 250, 779-786 (2013)
[ abstract | DOI ]

. Strong excitation intensity dependence of the photoluminescence line shape in GaAs_1-xBi_x single quantum well samples, Y.I. Mazur, V.G. Dorogan, M. Schmidbauer, G.G. Tarasov, S.R. Johnson, X. Lu, M.E. Ware, S-Q. Yu, T. Tiedje, G.J. Salamo, J. Appl. Phys. 113, 144308 (2013)
[ abstract | DOI |pdf ]

. Effects of spatial confinement and layer disorder in photoluminescence of GaAs_1-xBi_x/GaAs heterostructures, Yu. I. Mazur, V G Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S-Q. Yu, T. Tiedje, J. Appl. Phys. D, 46, 065306 (2013)
[ abstract | DOI |pdf ]

. Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high intensity excitation condition, M.K. Shakfa, A. Chernikov, D. Kalincev, S. Chatterjee, X. Lu, S.R. Johnson, D.A. Beaton, T. Tiedje, M. Koch, Phys. Status Solidi C. 10 , 1234-1237 (2013)
[ abstract | DOI ]

. Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells, M.K. Shakfa, D. Kalincev, X. Lu, S.R. Johnson, D.A. Beaton, T. Tiedje, A. Chemikov, S. Chaterjee, M. Koch, J. Appl. Phys. 114, 164306 (2013)
[ abstract | DOI |pdf ]

. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures, P.M. Mooney, K.P. Watkins, Zenan Jiang, A.F. Basile, R.B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D.A. Beaton, T. Tiedje, J. Appl. Phys. 113, 113708, (2013)
[ abstract | DOI |pdf ]

. Nanoplasmonic terahertz photoconductive switch on GaAs, B. Heshmat, H. Pahlevaninezhad, Y.J. Pang, M. Masnadi-Shirazi, R.B. Lewis, T. Tiedje, R. Gordon, T.E. Darcie, Nano Lett., 12, 6255-6259 (2012)
[ abstract | DOI ]

. Student success in first year university physics and mathematics courses: Does the high school attended make a difference?, M. Adamuti-Trache, G. Bluman, T. Tiedje, International Journal of Science Education, 1-23 (2012)
[ abstract | DOI ]

. Carrier-phonon coupling in GaAs_1-xBi_x/GaAs quantum wells, A. Chernikov, V. Bornwasser, M. Koch, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, S. Chatterjee, Semicon. Scien. and Technol. 27, 085012 (2012)
[ abstract | DOI ]

. Surface reconstructions during growth of GaAs_1-xBi_x alloys by MBE ,M. Masnadi-Shirazi, D.A. Beaton, R.B. Lewis, X.F. Lu, T. Tiedje, J. Cryst. Growth 338, 80-84 (2012)
[ abstract | DOI ]

. Recombination mechanisms and band alignment of GaAs_1-xBi_x/GaAs light emitting diode, N. Hossain, I. P. Marko, S. R. Jin, K. Hild, S. J. Sweeney, R. B. Lewis, D. A. Beaton, T. Tiedje, Appl. Phys. Lett. 100, 051105 (2012)
[ abstract | DOI |pdf ]

. Bi-induced p-type conductivity in nominally undoped Ga(AsBi), G. Pettinari, A. Patane, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, Appl. Phys. Lett. 100, 092109 (2012)
[ abstract | DOI |pdf ]

. Electronic band structure of GaBiAs/GaAs layers: influence of strain and band anti-crossing, Z. Batool, K. Hild, T. J. C. Hosea, X. Lu, T. Tiedje, S. J. Sweeney, J. Appl. Phys. 111, 113108 (2012)
[ abstract | DOI |pdf ]

. Growth of high Bi concentration GaAs_1-xBi_x by molecular beam epitaxy, R. B. Lewis, M. Masnadi-Shirazi, T. Tiedje, Appl. Phys. Lett. 101, 082112 (2012)
[ abstract | DOI |pdf ]

. Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs, N.A. Riordan, C. Gogineni, S.R. Johnson, X.F. Lu, T. Tiedje, D. Ding, Y.H. Zhang, R. Fritz, K. Kolata, S. Chatterjee, K. Volz, J. Mat. Sci. - Mat. In Electronics, 23, 1977 (2012)
[ abstract | DOI ]

. Effects of hydrogen on the electronic properties of GaAsBi alloys, G. Pettinari, A. Patane, A. Polimeni, M. Capizzi, X.F. Lu, T. Tiedje, App. Phys. Lett. 101, 222103 (2012)
[ abstract | DOI |pdf ]

. How much room for BiGa antisites in GaAsBi?, G. Ciatto, P. Alippi, A. A. Bonapasta, T. Tiedje, Appl. Phys. Lett. 99, 141912 (2011)
[ abstract | DOI |pdf ]

. Compositional Evolution of Bi-induced acceptor states in GaAs_1-xBi_x alloy, G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, T. Tiedje, Phys. Rev. B 83, 201201 (2011)
[ abstract | DOI ]

. Evidence of Two Disorder Scales in Ga(AsBi), S. Imhof, C. Wagner, A. Chernikov, M. Koch, K. Kolata, N. S. Koster, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, O. Rubel, A. Thranhardt Phys. Stat. Sol. (b) 248, 851-854 (2011)
[ abstract | DOI ]

. Deep level defects in GaAs_1-xBi_x/GaAs heterostructures, Z. Jiang, D. A. Beaton, R. B. Lewis, A. F. Basile, T. Tiedje and P. M. Mooney, Semicond. Sci. Technol. 26, 055020 (2011)
[ abstract | DOI ]

. Luminescence Dynamics in Ga(AsBi), S. Imhof, C. Wagner, A. Thranhardt, A. Chernikov, M. Koch, N. S. Koster, S. Chatterjee, S. W. Koch, O. Rubel, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, Appl. Phys. Lett. 98, 161104 (2011)
[ abstract | DOI |pdf ]

. Optical evidence of quantum well channel in low-temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructures, Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, S-Q. Yu, Z. M. Wang, T. Tiedje, G. J. Salamo, Nanotechnology 22, 375703 (2011)
[ abstract | DOI ]

. Temperature dependence of hole mobility in GaAs_1-xBi_x alloys, D. A. Beaton, R. B. Lewis, M. Masnadi-Shirazi, T. Tiedje, J. Appl. Phys. 108, 083708 (2010)
[ abstract | DOI |pdf ]

. Compositional dependence of the exciton reduced mass in GaAs_1-xBi_x (x=0-10%), G. Pettinari, A. Polimeni, J. H. Blokland, R. Trotta, P. C. M. Christianen, M. Capizzi, J. C. Maan, x. F. Lu, E. C. Young, T. Tiedje, Phys. Rev. B 81, 235211 (2010)
[ abstract | DOI ]

. Formation and vanishing of short range ordering in GaAs_1-xBi_x thin films, G. Ciatto, M. Thomasset, F. Glas, X. F. Lu, T. Tiedje, Phys. Rev. B 82, 201304 (2010)
[ abstract | DOI ]

. Epitaxial Nd-doped alpha-(Al_1-xGa_x)₂O₃ films on sapphire for solid state waveguide lasers, R. Kumaran, T. Tiedje, S. E. Webster, S. Penson, Optics Lett. 35, 3793-3795 (2010)
[ abstract | DOI |pdf ]

. Growth and fluctuations of suncups on Alpine snowpacks, K. A. Mitchell, T. Tiedje, J. Geophys. Res. Earth Surface , 115, F04039 (2010)
[ abstract | DOI ]

. Optical wave propagation in epitaxial Nd:Y₂O₃ planar waveguides, W. Li, S. E. Webster, R. Kumaran, S. Penson, T. Tiedje, Appl. Optics, 49, 586-591 (2010)
[ abstract | DOI ]

. Clustering effects in GaAsBi, S. Imhof, A. Thranhardt, A. Chernikov, M. Koch, N. S. Koster,K. Kolata, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, O. Rubel, Appl. Phys. Lett. 96, 131115 (2010)
[ abstract | DOI ]

. Structural analysis of thin epitaxial Y₂O₃ films on sapphire, S. E. Webster, R. Kumaran, S. Penson, T. Tiedje, J. Vac. Sci. Technol. B 28, C3A20 (2010)
[ abstract | DOI ]

. Molecular beam epitaxy growth of neodymium-doped yttrium aluminum perovskite, R. Kumaran, S.E. Webster, S. Penson, Wei Li, T. Tiedje, J. Cryst. Growth, 311, 2191-2194 (2009)
[ abstract | DOI ]

. GaAs_1-xBi_x light emitting diodes, R.B. Lewis , D.A. Beaton, X. Lu , T. Tiedje, J. Cryst. Growth, 311, 1872-1875 (2009)
[ abstract | DOI ]

. Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy, M. Beaudoin, I.C.W. Chan, D. Beaton, M. Elouneg Jamroz, T. Tiedje, M. Whitwick, E.C. Young, J.F. Young, N. Zangenberg, J. Cryst. Growth, 311, 1662-1665 (2009)
[ abstract | DOI ]

. Faceting at the step flow threshold in epitaxial growth on patterned surfaces, A. K. Jones, A. Ballestad, T. Li, M. Whitwick, J. Rottler, T. Tiedje, Phys. Rev. B 79, 205419 (2009)
[ abstract | DOI ]

. Composition dependence of photoluminescence of GaAs_1-xBi_x alloys, X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Y. Zhang, Appl. Phys. Lett. 95, 041903 (2009)
[ abstract | DOI ]

. Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers, R. Kumaran, S. Webster, S. Penson, W. Li, T. Tiedje, P. Wei, F. Schiettekatte, Optics Lett. 34, 3358-3360 (2009)
[ abstract | DOI ]

. Spatial correlation between Bi atoms in dilute GaAs_1-xBi_x: From random distribution to Bi pairing and clustering, G. Ciatto, E. C. Young, F. Glas, J. Chen, R. Alonso Mori, and T. Tiedje, Phys. Rev. B 78, 035325 (2008)
[ abstract | DOI ]

. Bi isoelectronic impurities in GaAs, S. Francoeur, S. Tixier, E. Young, T. Tiedje, and A. Mascarenhas, Phys. Rev. B 77, 085209 (2008)
[ abstract | DOI ]

. Influence of bismuth incorporation on the valence and conduction band edges of GaAs_1-xBi_x, G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, T. Tiedje, Appl. Phys. Lett. 92, 262105 (2008)
[ abstract | DOI ]

. Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs_1-xBi_x, X. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, M.B. Whitwick, Appl. Phys. Lett. 92 192110 (2008)
[ abstract | DOI ]

. Linear smoothing of GaAs(100) during epitaxial growth on rough substrates, M.B. Whitwick, T. Tiedje, Tian Li, J. Cryst. Growth 310, 3192-3196 (2008)
[ abstract | DOI ]

. Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy, T. Tiedje, A. Ballestad, Thin Solid Films 516, 3705-3728 (2008)
[ abstract | DOI ]

. E₊ transition in GaAs_1-xN_x and GaAs_1-xBi_x due to isoelectronic-impurity-induced perturbation of the conduction band, B. Fluegel, A. Mascarenhas, A. J. Ptak, S. Tixier, E. C. Young, T. Tiedje, Phys. Rev. B 76, 155209 (2007)
[ abstract | DOI ]



Patents

. Method for Determining the Temperature of Semiconductor Substrates from Bandgap Spectra, S.R. Johnson, T. Tiedje, US 6,116,779 (2000).


. Method and Apparatus for Controllable Frustration of Total Internal Reflection, L. Whitehead, T. Tiedje, R. Coope, US 5,999,307 (1999)


. Optical Method for Measuring Temperature of a Substrate Material with a Temperature Dependent Bandgap,S.R. Johnson, C. Lavoie, M. Nissen, T. Tiedje, U.S. #5568978 (1996).


. Optical Apparatus for Measuring Temperature of a Substrate Material with a Temperature Dependent Bandgap, S.R. Johnson , C. Lavoie, M. Nissen, T. Tiedje, US #5388909 (1994)




Theses

. Optimization of growth conditions of GaAs_1-xBi_x alloys for laser applications, Vahid Bahrami Yekta, Ph.D thesis, University of Victoria, Canada, 2016
[ DOI ]

. Optical and electronic properties of GaAsBi alloys for device applications, Mostafa Masnadi Shirazi Nejad, Ph.D thesis, University of British Columbia, Canada, August 2015.
[ DOI ]

. Optical properties charactrization of CZT semiconductors, Silvia Penkova, BEng.'s thesis, University of Victoria, Canada, 2014
[ DOI ]

. Photoluminescence and X-ray Diffraction Analyses of Cadmium Zinc Telluride Crystals, Ramin Jamnejad, Master's thesis, University of Victoria, Canada, 2014.
[ DOI ]

. Molecular beam epitaxy growth technology and properties of GaAsBi alloys, Ryan B. Lewis, Ph.D thesis, University of British Columbia, Canada, April 2014.
[ DOI ]

. New solid state laser crystals created by epitaxial growth, Raveen Kumaran, Ph.D. thesis, University of British Columbia, Canada, September 2012.
[ DOI ]

. Growth and structure of yttrium sesquioxide epitaxial films, Scott Webster, Ph.D thesis, University of British Columbia, Canada, March 2012.
[ DOI ]

. Electronic states and transport in GaNAs and GaAsBi, Daniel A. Beaton, Ph.D thesis, University of British Columbia, Canada, March 2011.
[ DOI ]

. Surface reconstructions during growth of GaAs_1-xBi_x alloys, Mostafa Masnadi Shirazi Nejad, Master's thesis, University of British Columbia, Canada, April 2010.
[ DOI ]

. Surface evolution during gallium arsenide homoepitaxy with molecular beam epitaxy, Michael Brian Whitwick, Master's thesis, University of British Columbia, Canada, December 2009.
[ DOI ]

. GaAs_1-xBi_x light emitting diodes : a new long wavelength semiconductor light source, Ryan B. Lewis, Master's thesis, University of British Columbia, Canada, October 2008.
[ DOI ]

. Kinetically determined surface morphology in epitaxial growth, Aleksy K. Jones, Master's thesis, University of British Columbia, Canada, October 2008.
[ DOI ]

. Chaotic pattern dynamics on sun-melted snow, Kevin Mitchell, Master's thesis, University of British Columbia, Canada, August 2008.
[ DOI ]

. Lensless imaging of red blood cells using coherent soft x-ray scattering, Arvin N. Yazdi, Master's thesis, University of British Columbia, Canada, March 2007.
[ DOI ]

. GaNAs and GaAsBi: Structural and electronic properties of two resonant state semiconductor alloys, Erin Christinia Young, Ph.D. thesis, University of British Columbia, Canada, December 2006.
[ DOI ]

. Epitaxial growth dynamics in Gallium Arsenide, Anders Ballestad, Ph.D. thesis, University of British Columbia, Canada, March 2005.
[ DOI ]

. Semiconductor light source for optical coherence tomography, Scott Webster, Master's thesis, University of British Columbia, Canada, November 2004.
[ DOI ]

. Evolution of surface texture in thermal chlorine etching and molecular beam epitaxy of Gallium Arsenide, Jens H. Schmid, Ph.D. thesis, University of British Columbia, Canada, May 2004.
[ DOI ]

. Modeling surface pattern evolution during thermal Cl₂ etching of GaAs (001), Richard Elliot Mar, Master's thesis, University of British Columbia, Canada, March 2004.
[ DOI ]

. Temperature dependence of photoluminescence of the dilute nitride semiconductor GaN_xAs_1-x, Daniel A. Beaton, Master's thesis, University of British Columbia, Canada, October 2003.
[ DOI ]

. Light activated Cl₂ etching of GaAs and optical holographic pattern formation, Michael Brian Whitwick, Master's thesis, University of British Columbia, Canada, April 2003.
[ DOI ]

. Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy, Martin Adamcyk, Ph.D. thesis, University of British Columbia, Canada, April 2002.
[ DOI ]

. Optical and electrical properties of dilute GaN_xAs_1-x, Eric Strohm, Master's thesis, University of British Columbia, Canada, January 2002
[ DOI ]

. Analysis of coherent resonant x-ray scattering and reconstruction of magnetic domains, Arman Rahmim, Master's thesis, University of British Columbia, Canada, November 2001.
[ DOI ]

. Surface morphology dynamics in strained-layer epitaxy, Thomas Henry Pinnington, Ph.D. thesis, University of British Columbia, Canada, December 1999.
[ DOI ]

. Smoothing of patterned Gallium Arsenide surface during epitaxial growth, Anders Ballestad, Master's thesis, University of British Columbia, Canada, July 1998.
[ DOI ]





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